Shengkun Zhang
Professor Shengkun Zhang received a Ph.D. in Condensed Matter Physics from Fudan University, Shanghai, China, in 1999. His research field is semiconductor nanomaterials and nanodevices. He has published over 60 articles on the subject and procured one U.S. Patent.
Expertise
Science Teaching and Learning, Science & Technology Studies
Degrees
Courses Taught
- This course is an introductory survey course of topics in astronomical theory, especially for students who are not science-oriented. A selected number of basic topics in astronomy are carefully examined and interpreted. The relevance of the scientist and his/her work to the lives of non-scientists is continually examined.
Corequisite: AST 109
Course Syllabus - This course serves as an observational introduction to astronomy, especially for students who are not science oriented. A selected number of basic topics in astronomy are carefully examined and subjected to observational verification. The relevance of the scientist and his/her work to the lives of non-scientists is continually examined.
Corequisite: AST 108
Course Syllabus - This course introduces students to the world beyond the earth. The methods of astronomy and our knowledge of the structure of the universe are presented as an ongoing human endeavor that has helped shape modern man as he/she takes his/her first steps into space.
Course Syllabus - This course serves as an introduction to general physics theory, especially for students who are not science oriented. A selected number of basic topics in physics are carefully examined and interpreted. Topics include mechanics, heat and thermodynamics, electromagnetism, optics, atomic and nuclear physics. The relevance of the scientist and his/her work to the lives of non-scientists is continually examined.
Course Syllabus - This course serves as an experimental introduction to general physics, especially for students who are not science oriented. A selected number of basic topics in physics are carefully examined and subjected to experimental verification. The relevance of the scientist and his/her work to the lives of non-scientists is continually examined.
Corequisite: PHY 108
Course Syllabus - This course serves as an introduction to Physics, especially for students who are not science-oriented. A selected number of basic physical ideas are carefully examined and interpreted non-mathematically. The relevance of the scientist and his/her work to the lives of non-scientists is continually examined.
Course Syllabus
Research and Projects
Publications
PUBLICATIONS (SELECTED)
- SK. Zhang and Robert R. Alfano
Carrier lifetime of black silicon as a photoconductor
Proc. SPIE 11274, Physics and Simulation of Optoelectronic Devices XXVIII, 112741Y (2020) - SK. Zhang, Iosif Zeylikovich, Taposh K. Gayen, Bidyut Das, Robert R. Alfano, Aidong Shen, and Maria C. Tamargo
Interface-state-phonon-assisted energy relaxation of hot electrons in CdSe quantum dots
Journal of Vacuum Science and Technology B 34, 02L107 (2016). - SK. Zhang, I. Zeylikovich, T.K. Gayen, R. Alfano, X. Zhou, and M Tamargo
Energy Splitting of CdSe Quantum Dots Induced by Intense Laser Excitation
Journal of Vacuum Science and Technology B 31 (3), 03C120 (2013). - SK. Zhang, Wubao Wang, Robert R. Alfano, Amir. M. Dabiran, Andrew M. Wowchak, and Peter P. Chow
Effects of polarization fields on avalanche breakdown of AlGaN quantum-well photodiode
Proceeding of SPIE, Vol. 8262, 826227 (Jan, 2012) - SK. Zhang, H. Ahmar, B. Chen, W. Wang, and R. Alfano
Photocurrent spectrum measurements of doped black silicon
Proceeding of SPIE, Vol. 7934, 79341A-1 (Jan, 2011). - Zhang SK, Thander Myint, W. B. Wang, B. B. Das, Noemi Perez-Paz, H. Lu, M. C. Tamargo, A Shen and R R Alfano
Optical study of strongly coupled CdSe quantum dots
Journal of Vacuum Science and Technology B, Vol 28, pages C3D17-C3D19, May/June 2010. - Zhang SK, W. B. Wang, R. R. Alfano, A. Teke, L. He, S. Dogan, D. J. Johnstone, and H. Morkoç
“Photoionization study of deep centers in GaN/AlGaN multiple quantum wells”,
Journal of Vacuum Science and Technology B, Vol 28, pages C3I10-C3I12, May/June 2010. - Zhang SK, Wubao Wang, Robert R. Alfano, Amir. M. Dabiran, Andrei Osinsky, Andrew M. Wowchak, Brian Hertog, and Peter P. Chow
Carrier screening effect in AlGaN quantum-well avalanche photodiode
Proceeding of SPIE in Integrated Optoelectronic Devices 7216, 72162G-1 (2009) - Zhang SK, Wang W, Alfano RR, Dabiran A, Osinsky A, Wowchak A, Hertog B, and Chow P
Injection and Avalanche Electroluminescence of Al1Ga0.9N/Al0.15Ga0.85N Multiple Quantum Wells
IEEE Journal of Selected Topics in Quantum Electronic 14, 1010(2008). - Zhou X, Zhang SK, Wang W, Alfano R, Lu H, Tamargo M, Shen A, Song CY, and Liu HC
Interband and Intersubband Optical Properties of doped n-Zn46Cd0.54Se/ Zn0.24Cd0.25Mg0.51Se Multiple Quantum Wells for Intersubband Device Applications
IEEE Journal of Selected Topics in Quantum Electronics 14, 1042 (2008). - Zhang SK, Lu H, Wang W, Das, Okoye N, Tamargo M and Alfano RR
Radiative and nonradiative recombination processes in ZnCdSe/ZnCdMgSe multi-quantum wells
Appl. Phys. 101, 023111 (2007).
also in February 2007 issue of Virtual Journal of Ultrafast Science - Zhang SK, Zhou X, Wang WB, Alfano RR, Dabiran AM, Wowchak AM and Chow PP
Low-voltage Avalanche Breakdown in AlGaN Multi-quantum Wells
Proceedings of the Materials Research Society, 955, 0955-I15-23 (2006). - Zhang SK, X. Zhou, Wang WB, Alfano RR, Shen A and Tamargo MC
Optical Properties of Heavily Doped n-type CdSe Quantum Dots for Intersubband Device Applications
Proceedings of the Materials Research Society, 959E, 0959-M06-05 (2006). - Zhang SK, Wang WB, Dabiran AM, Osinsky A, Wowchak AM, Hertog B, Plaut C, Chow PP, Gundry S, Troudt EO and Alfano RR
Avalanche Breakdown and Breakdown Luminescence of AlGaN Multi-quantum Wells
Phys. Lett. 87, 262113 (2005).
also in January 2006 issue of Virtual Journal of Ultrafast Science - Zhang SK, Wang WB, Alfano RR and Morkoc H
Unusual transient photocapacitance in GaN/AlGaN multi-quantum well detectors
Superlattices and Microstructures 35, 77 (2004). - Zhang SK, Wang WB, Shtau I, Alfano RR, Yun F and Morkoc H
Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain,
Phys. Lett. 81, 4862 (2002). - Zhang SK, Wang WB, Shtau I, Alfano RR, Yun F and Morkoc H
Backilluminated ultraviolet photodetector based on GaN/AlGaN multiple quantum wells,
Phys. Lett. 81, 4628 (2002). - Zhang SK, Santos PV, Hey R
Radiative recombination during ambipolar carrier transport by surface acoustic waves in GaAs quantum wells
Phys. Lett. 80, 2320 (2002) - Sogawa T, Santos PV, Zhang SK, Hey R, García-Cristóbal A and Cantarero A
Transport and lifetime enhancement of photoexcited spins in GaAs by surface acoustic waves
Rev. Lett. 87, 276601 (2001) - Zhang SK, Santos PV and Hey R
Photoluminescence modulation by high-frequency lateral electric fields in quantum wells
Phys. Lett. 78, 1559 (2001) - Sogawa T, Santos PV, Zhang SK, Eshlaghi S, Wieck AD and Ploog KH
Dynamic band-structure modulation of quantum wells by surface acoustic waves
Phys Rev B 63, 121307 (2001) - Zhang SK, Lu F, Jiang ZM, Zhu H and Wang X
Coulomb charging effect of holes in Ge quantum dots studied by deep level transient spectroscopy
Thin Solid Films 369, 65 (2000) - Zhang SK, Santos PV and Hey R
Microscopic carrier dynamics of quantum-well-based light storage cells
Phys. Lett. 77, 4380 (2000) - Zhang SK, Jiang ZM, Qin J, Lin F, Hu DZ, Pei CW and Lu F
Band offset measurements of SiGe quantum wells by conductance method of Semiconductors 20, 139 (1999) - Zhang SK, Zhu HJ, Lu F, Jiang ZM and Wang X
Coulomb charging effect in self-assembled Ge quantum dots studied by admittance spectroscopy
Rev. Lett. 80, 3340 (1998) - Zhang SK, Jiang ZM, Qin J and Wang X
Well depth fluctuation of Si1-xGex/Si quantum well structures studied by conductance-voltage technique
Appl. Phys. 84, 5587 (1998) - Zhang SK, Fu ZW, Ke L, Lu F and Wang X
Properties of interface states at Ta2O5/n-Si interfaces
Appl. Phys. 84, 335 (1998)
PATENT:
- US Patent No. 7,119,359 in Oct. 2006, “Photodetectors and optically pumped emitters based on III-Nitride multiple-quantum-well structures” by Alfano RR, Zhang SK and Wang WB.
